Plasma etching of high-brightness LED programme
Date:2011-11-29 17:28
Status:Be resolved
Question:ningcuidi
.
γγ3, GaN etch
γγGaN Gao Jian and chemical stability of bonding strength, its melting point and bond energy but also it has a very high degree of 2,500 wet etching acidoralkali etching agent capabilities. To date, due to the lack of suitable wet etching technology, enables people to develop the appropriate HBLED dry etching processes of production have had a great interest. This must be a single batch to a large number of wafer etching. Late in the 1990 of the 20th century, plasma etch
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