Plasma etching of high-brightness LED programme
Date:2011-11-29 17:28
Status:Be resolved
Question:ningcuidi
mask etch rate are closely related. Thanks to simplify the production process, reducing the overall cost per lumen, PR has also become the first choice.
To etch materials, Cl2, BCl3, Ar combination is often used at high plasma source achieving high etch rate. However, this increases the heat load of specimens and, therefore, use PR as a mask to maintain high etch rate of wafer sample is necessary for effective cooling.
Single crystal silicon is used to round tight temperature control
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