Plasma etching of high-brightness LED programme
Date:2011-11-29 17:28
Status:Be resolved
Question:ningcuidi
cal batch of etch rate up to 140nm/of temperature limit, PR use could reduce the use of power.
5, isolation of deep etching
When you need depth up to 7 microns, etch-rate is the key to this process. This step is etched into the role of active devices between the Sapphire substrate at the bottom. Because Sapphire is not electrically conductive, in physically separate isolation device before. If you use PR mask, major challenges of this moment erosion step is heat, because high plasma
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